dss4160u document number: ds31684 rev. 2 - 2 1 of 5 www.diodes.com march 2009 ? diodes incorporated dss4160u new product low v ce(sat) npn surface mount transistor features ? epitaxial planar die construction ? low collector-emitter saturation voltage, v ce(sat) ? complementary pnp type available (dss5160u) ? ultra-small surface mount package ? lead free by design/rohs compliant (note 1) ? "green device" (note 2) mechanical data ? case: sot-323 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper plated alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.006 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5 v collector current - continuous i c 1 a peak pulse collector current i cm 2 a base current (dc) i b 300 ma peak base current i bm 1 a thermal characteristics characteristic symbol value unit power dissipation (note 3) @ t a = 25 c p d 400 mw thermal resistance, junction to ambient (note 3) @ t a = 25 c r c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diode?s inc.?s ?green? policy can be found on our website at http://www.diodes.com /products/lead_free/index.php. 3. device mounted on fr-4 pcb with minimum recommended pad layout. top view device schematic e b c
dss4160u document number: ds31684 rev. 2 - 2 2 of 5 www.diodes.com march 2009 ? diodes incorporated dss4160u new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage v ( br ) cbo 80 ? ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage (note 4) v ( br ) ceo 60 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo 5 ? ? v i e = 100 a, i c = 0 collector cutoff current i cbo ? ? 100 50 na a v cb = 60v, i e = 0 v cb = 60v, i e = 0, t a = 150c collector cutoff current i ces ? ? 100 na v ce = 60v, v be = 0 emitter cutoff current i ebo ? ? 100 na v eb = 5v, i c = 0 on characteristics (note 4) dc current gain h fe 250 200 100 ? ? ? ? ? ? ? v ce = 5v, i c = 1ma v ce = 5v, i c = 500ma v ce = 5v, i c = 1a collector-emitter saturation voltage v ce(sat) ? ? ? ? ? ? 115 150 280 mv i c = 100ma, i b = 1ma i c = 500ma, i b = 50ma i c = 1a, i b = 100ma collector-emitter saturation resistance r ce ( sat ) ? ? 280 m ? i c = 1a, i b = 100ma base-emitter saturation voltage v be ( sat ) ? ? 1.1 v i c = 1a, i b = 50ma base-emitter turn on voltage v be ( on ) ? ? 0.9 v v ce = 5v, i c = 1a small signal characteristics output capacitance c obo ? ? 10 pf v cb = 10v, f = 1.0mhz current gain-bandwidth product f t 150 ? ? mhz v ce = 10v, i c = 50ma, f = 100mhz switching characteristics turn-on time t on ? 63 ? ns v cc = 10v i c = 0.5a, i b1 = i b2 = 25ma delay time t d ? 33 ? ns rise time t r ? 30 ? ns turn-off time t off ? 420 ? ns storage time t s ? 380 ? ns fall time t f ? 40 ? ns notes: 4. measured under puls ed conditions. pulse width = 300 s. duty cycle 2%. 0 200 400 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 power dissipation vs. ambient temperature (note 3) a 600 0 r = 313c/w ja 300 500 100 0.1 1 10 100 v , collector-emitter voltage (v) ce fig. 2 typical collector current vs. collector-emitter voltage (note 3) 0.001 0.1 1 10 i, c o lle c t o r c u r r en t (a) c 0.01 pw = 100ms pw = 10ms pw = 1ms dc
dss4160u document number: ds31684 rev. 2 - 2 3 of 5 www.diodes.com march 2009 ? diodes incorporated dss4160u new product 1 10 100 10,000 i , collector current (ma) c fig. 3 typical dc current gain vs. collector current 1,000 0 200 400 600 800 h, d c c u r r e n t g ai n fe 1,000 t = 150c a t = 25c a t = -55c a t = 85c a v = 5v ce 1 10 100 10,000 i , collector current (ma) c fig. 4 typical collector-emitter saturation voltage vs. collector current 0.1 1,000 0.001 0.01 0.1 1 v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) i/i = 10 cb t = 85c a t = 25c a t = -55c a t = 150c a 0.1 10 100 1,000 10,000 i , collector current (ma) c fig. 5 typical base-emitter turn-on voltage vs. collector current 1 0 0.2 0.4 0.6 0.8 1.0 1.2 v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) t = 150c a t = 25c a t = -55c a t = 85c a v = 5v ce 0.1 10 100 10,000 i , collector current (ma) c fig. 6 typical base-emitter saturation voltage vs. collector current 11,000 0 0.2 0.4 0.6 0.8 1.0 1.2 v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) t = 150c a t = 25c a t = -55c a t = 85c a i = 10 cb /i 0 30 60 90 120 150 180 0.1 1 10 100 v , reverse voltage (v) r fig. 7 typical capacitance characteristics c a p a c i t a n c e (pf) c ibo c obo f = 1mhz
dss4160u document number: ds31684 rev. 2 - 2 4 of 5 www.diodes.com march 2009 ? diodes incorporated dss4160u new product 0.00001 0.0001 0.001 0.01 0.1 1 10 100 fig. 8 transient thermal response (note 3) t , pulse duration time (s) 1 10,000 1,000 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 310c/w ja ja p(pk) t 1 t 2 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 ordering information (note 5) part number case packaging DSS4160U-7 sot-323 3000/tape & reel notes: 5. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions sot-323 dim min max typ a 0.25 0.40 0.30 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d - - 0.65 g 1.20 1.40 1.30 h 1.80 2.20 2.15 j 0.0 0.10 0.05 k 0.90 1.00 1.00 l 0.25 0.40 0.30 m 0.10 0.18 0.11 0 8 - all dimensions in mm zn9 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) a m j l d b c h k g zn9 ym
dss4160u document number: ds31684 rev. 2 - 2 5 of 5 www.diodes.com march 2009 ? diodes incorporated dss4160u new product suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. dimensions value (in mm) z 2.8 x 0.7 y 0.9 c 1.9 e 1.0 x e y c z
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